Compound Semiconductors for Generating, Emitting and Manipulating Energy: Volume 1396: Symposium Held November 28 - December 2, 2011, Boston, Massachusetts, U.s.a. - Rilegato

Symposium O, 'Compound Semiconductors for Generating, Emitting and Manipulating Energy', was held November 28–December 2 at the 2011 MRS Fall Meeting. Energy is arguably the most important issue for the future and this symposium provided a forum to discuss the research and development for collecting, emitting and manipulating energy.

Part I. III-Nitride LEDS: 1. Understanding MOCVD gas chemistry to reduce the cost of ownership for GaN LED and AsP CPV technologies; 2. Optimization of the optical and electrical properties of GaN vertical light emitting diode with current block layer; 3. Enhanced emission from InxGa1-xN-based LED structures using III-nitride based distributed Bragg reflector; 4. Assessment of transparent conducting zinc oxide as a tunneling contact to p-GaN; Part II. Optoelectronics: 5. Integrated optoelectronic devices on silicon; 6. Mid-infrared lead-salt surface emitting photonic crystal laser on silicon; 7. Cathodoluminescence characterization of Si-doped orientation patterned GaAs crystals; 8. Synthesis and characterization of multi-walled carbon nanotubes with semiconductor nanoparticles for optoelectronics; 9. Influences of hydrogen passivation on NIR photodetection of n-type b-FeSi2/p-type Si heterojunction photodiodes fabricated by facing-targets direct-current sputtering; 10. 1.54lm luminescence of b-FeSi2 grown on Au-coated Si substrates; Part III. Solar Cell Technology: 11. The research and development for collecting, emitting, and manipulating energy; 12. ZnO/ZnSe type II core-shell nanowire array solar cell; 13. Tailoring of CdS nano films through CBD-isochronal synthesis for PV applications; Part IV. Thermoelectrics: 14. A systematic study of the thermoelectric properties of GaN-based wide band gap semiconductors; 15. Cost performance trade-off in thermoelectric modules with low fractional area coverage; Part V. Transistor Technology: 16. The effects of device dimension, substrate temperature, and gate metallization on the reliability of AlGaN/GaN high electron mobility transistors; 17. Copper oxide edge-termination for GaN Schottky barrier diodes with low turn-on voltage; 18. Properties of MOCVD-grown GaN:Gd films for spintronic devices; 19. Performance comparison and design issue on different GaN power transistor structures; Part VI. Photonics and Optics: 20. Nonlinear optical techniques for characterization of wide bandgap semiconductor electronic properties: III-nitrides, SiC, and diamonds; 21. Couplings in GaAs/AlGaAs/metal photonic waveguides with metallic variations; 22. Optical characterization of a InGaN/GaN microcavity with epitaxial AlInN/GaN bottom DBR; 23. AlN/GaN distributed Bragg reflectors grown via metal organic vapor phase epitaxy using GaN insertion layers; 24. GaN-based neutron scintillators with a 6LiF conversion layer; Part VII. Compound Semiconductor Characterization: 25. Effects of silicon doping and threading dislocation density on stress evolution in AlGaN films; 26. Characterization of InGaN and InAlN epilayers by microdiffraction X-ray reciprocal space mapping; 27. Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN; 28. Photoluminescence study of damage introduced in GaN by Ar- and Kr-plasmas etching; 29. The influence of Si doping to BP(100) layer on Si(100) by TEM; Part VIII. Compound Semiconductors Processing: 30. Molecular beam epitaxial growth of nonpolar a-plane InN/GaN heterostructures; 31. Investigating GaSb(001) dry etching by ICP-RIE on a non-silicon containing sample holder with no organic gases; 32. Amorphous silicon Bragg reflectors fabricated by oblique angle deposition; 33. Manipulating 3C-SiC nanowire morphology through gas flow dynamics; 34. Investigation of band-gap states in AlGaN/GaN hetero-structures with different growth conditions of GaN buffer layers; 35. Epitaxial growth and characterization of cubic GaN on BP/Si(100) substrates; 36. InN on GaN heterostructure growth by migration enhanced epitaxial afterglow (MEAglow); 37. Nuclear spin polarization by out-of-plane spin injection from ferromagnet into an InAs heterostructure.